Direct Gold to Gold or Copper to Copper Bonding Technology
Technology Description
Direct gold to gold or copper to copper bonding technology involves the simultaneous application of bonding pressure and/or bonding temperature on two contacting gold or copper surfaces over a short period of time. A flip chip bonder is used for this bonding technology. At SIMTech, room to low temperature bonding for few tens of seconds is developed between direct gold and copper microjoining processes respectively. Novel bonding technique by using surface modifications is also explored in order to alleviate harsh bonding conditions.
Specifications & Features
The developed technology allows gold and copper surfaces to be bonded at a temperature ranges from room temperature (23°C) to low temperature (80°C) in both chip and wafer-level processes. Unlike conventional bonding technologies available, this can be done without the presence of ultrahigh vacuum conditions. Bonding of samples in sizes as small as 4mm may be achieved in 30 seconds in ambient, and the resulting bond strength is as high as 50 MPa, which is higher than that obtained by conventional bonding techniques that use high bonding temperature and ultrahigh vacuum system.
Patents
SIMTech offers capabilities to deliver an entire process development which includes process design, sample fabrication, material selection, bonding processes, mechanical testing and failure analysis such as
Technology Description
Direct gold to gold or copper to copper bonding technology involves the simultaneous application of bonding pressure and/or bonding temperature on two contacting gold or copper surfaces over a short period of time. A flip chip bonder is used for this bonding technology. At SIMTech, room to low temperature bonding for few tens of seconds is developed between direct gold and copper microjoining processes respectively. Novel bonding technique by using surface modifications is also explored in order to alleviate harsh bonding conditions.
Specifications & Features
The developed technology allows gold and copper surfaces to be bonded at a temperature ranges from room temperature (23°C) to low temperature (80°C) in both chip and wafer-level processes. Unlike conventional bonding technologies available, this can be done without the presence of ultrahigh vacuum conditions. Bonding of samples in sizes as small as 4mm may be achieved in 30 seconds in ambient, and the resulting bond strength is as high as 50 MPa, which is higher than that obtained by conventional bonding techniques that use high bonding temperature and ultrahigh vacuum system.
Applications & Markets
The developed interconnect materials and bonding technologies can potentially be transferred to applications and industries which accounts for close to 50% of Singapore’s total industrial output. These industries may engage in applications involving 3-D integrated circuit and systems, hybrid MicroElectroMechanicalSystems / NanoElectroMechanicalSystems, system-in-package and large component bonding.
The developed interconnect materials and bonding technologies can potentially be transferred to applications and industries which accounts for close to 50% of Singapore’s total industrial output. These industries may engage in applications involving 3-D integrated circuit and systems, hybrid MicroElectroMechanicalSystems / NanoElectroMechanicalSystems, system-in-package and large component bonding.
Advantages
The technology developed at SIMTech is a new way to bond gold and copper surfaces, and avoids the need of underbump metallization, thus involving fewer process steps which in turn lower the manufacturing costs significantly. The key advantages of this technology are as follows:
The technology developed at SIMTech is a new way to bond gold and copper surfaces, and avoids the need of underbump metallization, thus involving fewer process steps which in turn lower the manufacturing costs significantly. The key advantages of this technology are as follows:
- Suitable for miniaturization of devices and packages
- High mechanical strength and electrical conductivity of interconnects
- Low thermal budget for better device performance and reliability
- Low cost.
Patents
- Room Temperature Direct Metal-Metal Bonding PCT Application No. PCT/SG2008/000448, International Filing Date: 27 November 2008.
SIMTech offers capabilities to deliver an entire process development which includes process design, sample fabrication, material selection, bonding processes, mechanical testing and failure analysis such as
- Design and building of test vehicles used in mechanical, electrical and reliability tests
- Process for fabricating bonding metal surfaces and/or microfeatures
- Process for surface modification to form bondable and reliable metal chips/substrates.
For more information, please contact:
Dr Wei Jun
Email :
Tel: 6793 8575
Dr Wei Jun
Email :
Tel: 6793 8575
